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| (R) ISO 9001 Registered Process C1226 CMOS 1.2m 100V CMOS, Double Metal - Double Poly Electrical Characteristics T = 25oC Unless otherwise noted Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor Threshold Voltage VTN Body Factor N Conduction Factor N Effective Channel Length LeffN Width Encroachment WN Punch Through Voltage BVDSSN Poly Field Threshold Voltage VTFPN Symbol P-Channel High Voltage Transistor Threshold Voltage HVTP Punch Through Voltage HVBVDSSP ON Resistance HVPR0N Operating Voltage P-Channel Low Voltage Transistor Threshold Voltage VTP Body Factor P Conduction Factor P Effective Channel Length LeffP Width Encroachment WP BVDSSP Punch Through Voltage Poly Field Threshold Voltage VTFP(P) Minimum 0.70 120 550 Typical 0.90 700 VGS = 5V VDS = 100V 0.45 0.475 78 1.35 0.4 12 15 Typical -0.90 2500 VGS = 5V VDS = 100V -0.45 0.6 25 1.5 0.4 -12 -12 Maximum 1.10 850 Unit V V Comments W/L = 147/5 0.30 64 0.65 92 5 8 Minimum -0.70 -120 2000 V V1/2 A/V 2 m m V V Unit V V V 100x1.5m 100x1.5m 100x100m 100x1.5m Per side Maximum -1.10 3000 Comments W/L = 139/5 -0.65 20 -0.30 30 -5 -8 V V1/2 A/V 2 m m V V 100x1.5m 100x1.5m 100x100m 100x1.5m Per side (c) 2001 IMP, Inc. 69 Process C1226 Physical Characteristics Diffusion & Thin Films Symbol Starting Material p<100> Well (field) Sheet Resistance N-well(f) N+ N+ Sheet Resistance N+ Junction Depth xjN+ P+ P+ Sheet Resistance P+ Junction Depth xjP+ High-Voltage Gate Oxide Th HTGOX Gate Oxide Thickness TGOX Interpoly Oxide IPOX POLY1 Gate Poly Sheet Resistance M1 Metal-1 Sheet Resistance M2 Metal-2 Sheet Resistance Passivation Thickness TPASS High Voltage Section Rules Min Channel Width Min Spacing, Active Region, 5V Poly1 Width/Space Poly2 Width/Space Contact Width/Space Via Width/Space Metal-1 Width/Space Metal-2 Width/Space Minimum 1.0 20 60 Typical 1.7 35 0.3 110 0.3 24 24 42.0 30.0 45 29 200+900 Maximum 2.4 50 150 Unit K/ / m / m nm nm nm / m/ m/ nm Comments n-well 33.6 50.4 oxide+nit. Layout Rules 4.0m 2.0m 1.5/2.0m 3.0/2.0m 1.5/1.5m 1.5/1.5m 2.5/1.5m 2.5/1.5m Diffusion Overlap of Contact Poly Overlap of Contact Contact to Poly Space Metal-1 Overlap of Contact Minimum Pad Opening Minimum Pad to Pad Spacing Minimum Pad Pitch 1.0m 1.0m 1.5m 1.0m 65x65m 5.0m 80m 70 C1226-11-01 |
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